Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

The effects of the intense laser field on donor impurities in a cylindrical GaxIn1-xNyAs1-y/GaAs quantum dot under the electric field

Identifieur interne : 002319 ( Main/Repository ); précédent : 002318; suivant : 002320

The effects of the intense laser field on donor impurities in a cylindrical GaxIn1-xNyAs1-y/GaAs quantum dot under the electric field

Auteurs : RBID : Pascal:11-0317920

Descripteurs français

English descriptors

Abstract

For different nitrogen and indium concentrations, intense laser field (ILF) effect on donor impurity binding energy in a cylindrical Gaxln1-xNyAs1-y/GaAs quantum dot (QD) has been studied. Results show that ILF creates an additional confinement on the electronic and impurity states in QD and increases nitrogen and indium concentration effects on electronic states.

Links toward previous steps (curation, corpus...)


Links to Exploration step

Pascal:11-0317920

Le document en format XML

<record>
<TEI>
<teiHeader>
<fileDesc>
<titleStmt>
<title xml:lang="en" level="a">The effects of the intense laser field on donor impurities in a cylindrical Ga
<sub>x</sub>
In
<sub>1-x</sub>
N
<sub>y</sub>
As
<sub>1-y</sub>
/GaAs quantum dot under the electric field</title>
<author>
<name sortKey="Kasapoglu, E" uniqKey="Kasapoglu E">E. Kasapoglu</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Cumhuriyet University, Physics Department</s1>
<s2>58140 Sivas</s2>
<s3>TUR</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>58140 Sivas</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Duque, C A" uniqKey="Duque C">C. A. Duque</name>
<affiliation wicri:level="1">
<inist:fA14 i1="02">
<s1>Instituto de Fisica, Universidad de Antioquia</s1>
<s2>AA 1226 Medellin</s2>
<s3>COL</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Colombie</country>
<wicri:noRegion>AA 1226 Medellin</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Sakiroglu, S" uniqKey="Sakiroglu S">S. Sakiroglu</name>
<affiliation wicri:level="1">
<inist:fA14 i1="03">
<s1>Nanoscience Center, Department of Physics, University of Jyväskylä</s1>
<s2>40014 Jyväskylä</s2>
<s3>FIN</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Finlande</country>
<wicri:noRegion>40014 Jyväskylä</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1">
<inist:fA14 i1="04">
<s1>Dokuz Eylül University, Physics Department</s1>
<s2>35160 Buca, Izmir</s2>
<s3>TUR</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>35160 Buca, Izmir</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Sari, H" uniqKey="Sari H">H. Sari</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Cumhuriyet University, Physics Department</s1>
<s2>58140 Sivas</s2>
<s3>TUR</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>58140 Sivas</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Sokmen, I" uniqKey="Sokmen I">I. Sökmen</name>
<affiliation wicri:level="1">
<inist:fA14 i1="04">
<s1>Dokuz Eylül University, Physics Department</s1>
<s2>35160 Buca, Izmir</s2>
<s3>TUR</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>35160 Buca, Izmir</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt>
<idno type="inist">11-0317920</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0317920 INIST</idno>
<idno type="RBID">Pascal:11-0317920</idno>
<idno type="wicri:Area/Main/Corpus">002E63</idno>
<idno type="wicri:Area/Main/Repository">002319</idno>
</publicationStmt>
<seriesStmt>
<idno type="ISSN">1386-9477</idno>
<title level="j" type="abbreviated">Physica ( E) low-dimens. syst. nanostrut.</title>
<title level="j" type="main">Physica. E, low-dimentional systems and nanostructures</title>
</seriesStmt>
</fileDesc>
<profileDesc>
<textClass>
<keywords scheme="KwdEn" xml:lang="en">
<term>Binding energy</term>
<term>Confinement</term>
<term>Electric field effects</term>
<term>Electron state</term>
<term>Electronic effect</term>
<term>Electronic properties</term>
<term>Gallium arsenides</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Impurity states</term>
<term>Indium</term>
<term>Nanostructured materials</term>
<term>Quantity ratio</term>
<term>Quantum dots</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr">
<term>Arséniure de gallium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Point quantique</term>
<term>Nanomatériau</term>
<term>Effet champ électrique</term>
<term>Indium</term>
<term>Energie liaison</term>
<term>Confinement</term>
<term>Etat électronique</term>
<term>Propriété électronique</term>
<term>Etat impureté</term>
<term>Effet concentration</term>
<term>Effet électronique</term>
<term>8107T</term>
<term>8535B</term>
<term>8107B</term>
<term>7321</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front>
<div type="abstract" xml:lang="en">For different nitrogen and indium concentrations, intense laser field (ILF) effect on donor impurity binding energy in a cylindrical Ga
<sub>x</sub>
ln
<sub>1-x</sub>
N
<sub>y</sub>
As
<sub>1-y</sub>
/GaAs quantum dot (QD) has been studied. Results show that ILF creates an additional confinement on the electronic and impurity states in QD and increases nitrogen and indium concentration effects on electronic states.</div>
</front>
</TEI>
<inist>
<standard h6="B">
<pA>
<fA01 i1="01" i2="1">
<s0>1386-9477</s0>
</fA01>
<fA03 i2="1">
<s0>Physica ( E) low-dimens. syst. nanostrut.</s0>
</fA03>
<fA05>
<s2>43</s2>
</fA05>
<fA06>
<s2>8</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG">
<s1>The effects of the intense laser field on donor impurities in a cylindrical Ga
<sub>x</sub>
In
<sub>1-x</sub>
N
<sub>y</sub>
As
<sub>1-y</sub>
/GaAs quantum dot under the electric field</s1>
</fA08>
<fA11 i1="01" i2="1">
<s1>KASAPOGLU (E.)</s1>
</fA11>
<fA11 i1="02" i2="1">
<s1>DUQUE (C. A.)</s1>
</fA11>
<fA11 i1="03" i2="1">
<s1>SAKIROGLU (S.)</s1>
</fA11>
<fA11 i1="04" i2="1">
<s1>SARI (H.)</s1>
</fA11>
<fA11 i1="05" i2="1">
<s1>SÖKMEN (I.)</s1>
</fA11>
<fA14 i1="01">
<s1>Cumhuriyet University, Physics Department</s1>
<s2>58140 Sivas</s2>
<s3>TUR</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02">
<s1>Instituto de Fisica, Universidad de Antioquia</s1>
<s2>AA 1226 Medellin</s2>
<s3>COL</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="03">
<s1>Nanoscience Center, Department of Physics, University of Jyväskylä</s1>
<s2>40014 Jyväskylä</s2>
<s3>FIN</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="04">
<s1>Dokuz Eylül University, Physics Department</s1>
<s2>35160 Buca, Izmir</s2>
<s3>TUR</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA20>
<s1>1427-1432</s1>
</fA20>
<fA21>
<s1>2011</s1>
</fA21>
<fA23 i1="01">
<s0>ENG</s0>
</fA23>
<fA43 i1="01">
<s1>INIST</s1>
<s2>145E</s2>
<s5>354000189893930040</s5>
</fA43>
<fA44>
<s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45>
<s0>45 ref.</s0>
</fA45>
<fA47 i1="01" i2="1">
<s0>11-0317920</s0>
</fA47>
<fA60>
<s1>P</s1>
</fA60>
<fA61>
<s0>A</s0>
</fA61>
<fA64 i1="01" i2="1">
<s0>Physica. E, low-dimentional systems and nanostructures</s0>
</fA64>
<fA66 i1="01">
<s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG">
<s0>For different nitrogen and indium concentrations, intense laser field (ILF) effect on donor impurity binding energy in a cylindrical Ga
<sub>x</sub>
ln
<sub>1-x</sub>
N
<sub>y</sub>
As
<sub>1-y</sub>
/GaAs quantum dot (QD) has been studied. Results show that ILF creates an additional confinement on the electronic and impurity states in QD and increases nitrogen and indium concentration effects on electronic states.</s0>
</fC01>
<fC02 i1="01" i2="3">
<s0>001B80A07T</s0>
</fC02>
<fC02 i1="02" i2="X">
<s0>001D03F18</s0>
</fC02>
<fC02 i1="03" i2="3">
<s0>001B80A07B</s0>
</fC02>
<fC02 i1="04" i2="3">
<s0>001B70C21</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE">
<s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG">
<s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE">
<s0>Semiconducteur III-V</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG">
<s0>III-V semiconductors</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE">
<s0>Composé III-V</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG">
<s0>III-V compound</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA">
<s0>Compuesto III-V</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE">
<s0>Point quantique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG">
<s0>Quantum dots</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE">
<s0>Nanomatériau</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG">
<s0>Nanostructured materials</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE">
<s0>Effet champ électrique</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG">
<s0>Electric field effects</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE">
<s0>Indium</s0>
<s2>NC</s2>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG">
<s0>Indium</s0>
<s2>NC</s2>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE">
<s0>Energie liaison</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG">
<s0>Binding energy</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE">
<s0>Confinement</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG">
<s0>Confinement</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE">
<s0>Etat électronique</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG">
<s0>Electron state</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA">
<s0>Estado electrónico</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE">
<s0>Propriété électronique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG">
<s0>Electronic properties</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA">
<s0>Propiedad electrónica</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE">
<s0>Etat impureté</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG">
<s0>Impurity states</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE">
<s0>Effet concentration</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG">
<s0>Quantity ratio</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE">
<s0>Effet électronique</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG">
<s0>Electronic effect</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA">
<s0>Efecto electrónico</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE">
<s0>8107T</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE">
<s0>8535B</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE">
<s0>8107B</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE">
<s0>7321</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21>
<s1>220</s1>
</fN21>
<fN44 i1="01">
<s1>OTO</s1>
</fN44>
<fN82>
<s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 002319 | SxmlIndent | more

Ou

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 002319 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:11-0317920
   |texte=   The effects of the intense laser field on donor impurities in a cylindrical GaxIn1-xNyAs1-y/GaAs quantum dot under the electric field
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024