The effects of the intense laser field on donor impurities in a cylindrical GaxIn1-xNyAs1-y/GaAs quantum dot under the electric field
Identifieur interne : 002319 ( Main/Repository ); précédent : 002318; suivant : 002320The effects of the intense laser field on donor impurities in a cylindrical GaxIn1-xNyAs1-y/GaAs quantum dot under the electric field
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Abstract
For different nitrogen and indium concentrations, intense laser field (ILF) effect on donor impurity binding energy in a cylindrical Gaxln1-xNyAs1-y/GaAs quantum dot (QD) has been studied. Results show that ILF creates an additional confinement on the electronic and impurity states in QD and increases nitrogen and indium concentration effects on electronic states.
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In<sub>1-x</sub>
N<sub>y</sub>
As<sub>1-y</sub>
/GaAs quantum dot under the electric field</title>
<author><name sortKey="Kasapoglu, E" uniqKey="Kasapoglu E">E. Kasapoglu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Cumhuriyet University, Physics Department</s1>
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<author><name sortKey="Duque, C A" uniqKey="Duque C">C. A. Duque</name>
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<author><name sortKey="Sakiroglu, S" uniqKey="Sakiroglu S">S. Sakiroglu</name>
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<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Dokuz Eylül University, Physics Department</s1>
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<author><name sortKey="Sari, H" uniqKey="Sari H">H. Sari</name>
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<author><name sortKey="Sokmen, I" uniqKey="Sokmen I">I. Sökmen</name>
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<term>Electronic effect</term>
<term>Electronic properties</term>
<term>Gallium arsenides</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Impurity states</term>
<term>Indium</term>
<term>Nanostructured materials</term>
<term>Quantity ratio</term>
<term>Quantum dots</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Arséniure de gallium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
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<term>Nanomatériau</term>
<term>Effet champ électrique</term>
<term>Indium</term>
<term>Energie liaison</term>
<term>Confinement</term>
<term>Etat électronique</term>
<term>Propriété électronique</term>
<term>Etat impureté</term>
<term>Effet concentration</term>
<term>Effet électronique</term>
<term>8107T</term>
<term>8535B</term>
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<front><div type="abstract" xml:lang="en">For different nitrogen and indium concentrations, intense laser field (ILF) effect on donor impurity binding energy in a cylindrical Ga<sub>x</sub>
ln<sub>1-x</sub>
N<sub>y</sub>
As<sub>1-y</sub>
/GaAs quantum dot (QD) has been studied. Results show that ILF creates an additional confinement on the electronic and impurity states in QD and increases nitrogen and indium concentration effects on electronic states.</div>
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In<sub>1-x</sub>
N<sub>y</sub>
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<sZ>3 aut.</sZ>
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<fA14 i1="04"><s1>Dokuz Eylül University, Physics Department</s1>
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ln<sub>1-x</sub>
N<sub>y</sub>
As<sub>1-y</sub>
/GaAs quantum dot (QD) has been studied. Results show that ILF creates an additional confinement on the electronic and impurity states in QD and increases nitrogen and indium concentration effects on electronic states.</s0>
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<s5>06</s5>
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<s4>INC</s4>
<s5>71</s5>
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<fC03 i1="16" i2="3" l="FRE"><s0>8535B</s0>
<s4>INC</s4>
<s5>72</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>73</s5>
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<fC03 i1="18" i2="3" l="FRE"><s0>7321</s0>
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<s5>74</s5>
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